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3. AR-N 7520 New - Negative E-beam Resist

ㆍ	Negative e-beam resist with highest resolution
ㆍ	Highest resolution and highly sensitive for the production of integrated circuits
ㆍ	Thickness: 90 nm - 800 nm
ㆍ	Mix & match processes between e-beam and UV exposure 248-365 nm, negative in the UV range
ㆍ	100ml, 250ml, 500ml, 1L 용량 선택 가능

AR-N 7520 New - Negative E-beam Resist

Characterisation

Properties

- E-beam, deep UV, i-line (formerly SX AR-N 7520/4).
- Short writing times, very high contrast.
- Mix & match processes between e-beam and UV exposure
248-365 nm, negative in the UV range.
- Highest resolution, very process-stable (no CAR).
- Plasma etching resistant, temp.-stable up to 140 °C.
- novolac, organic crosslinking agent.
- safer solvent PGMEA.

Parameter /AR-N 7520 New	.17	.11	.07
Thickness (μm) /4000 rpm	0.4	0.2	0.1
Resolution best value (nm)	28

Plasma etching rates (nm/min) (5 Pa, 240-250 V Bias)	Ar-sputtering	8
	O₂	169
	CF₄	41
	80 CF₄ + 16 O₂	90

Spin Curve

Process chemicals

Adhesion promotor	AR 300-80
Developer	AR 300-47, AR 300-46
Thinner	AR 300-12
Remover	AR 600-71, 300-73

Process results
AR-N 7520.07 new 30-nm lines at a film thickness of 90 nm	AR-N 7520.17 new 400 and 600 nm lines, thickness 400 nm