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  • Wafer
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  • E-beam resist
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Negative ebeam resist

2. HSQ - Negative E-beam Resist
ㆍ  Hydrogen silsesquioxane (HSQ), with a chemical formula of HSiOx, is a high purity, silsesquioxane-based semiconductor grade polymer applicable as a negative tone resist for electron beam patterns, EUV, nanoimprint lithography and Step and Flash Imprint Lithography (SFIL).
ㆍ  It is readily soluble in non-polar organic solvents like methyl isobutylketone (MIBK), methyl siloxane and toluene for thin-film fabrication.
ㆍ  Thickness: 12 nm - over 1100 nm. Solution Concentrations: 1 – 45%.
ㆍ  50ml, 100ml 등 이외 용량 선택 가능. 파우더 제공 가능.