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Positive ebeam resist (6)
Negative ebeam resist (5)

5. DisCharge H2O, H2OX2, H2OX4 conductive resist

ㆍ	Conductive resist.
ㆍ	* DisCharge H2O: about 40 nm @ 1000 RPM / Resistivity about 7.30 Ωm (Av.).
ㆍ	* DisCharge H2OX2: about 80 nm @ 1000 RPM / Resistivity about 7.65 Ωm (Av.).
ㆍ	* DisCharge H2OX4: about 165 nm @ 1000 RPM / Resistivity about 9.48 Ωm (Av.).
ㆍ	높은 안정성과 긴 제품 수명 (약 2년).
ㆍ	저렴한 가격. 25 ml ~ 4 L 다양한 용량.

DisCharge H2O, H2OX2, H2OX4 conductive resist

DisCharge Advantage

DisCharge Properties

- Efficient charge dissipation in EBL on a broad range of resist
materials (PMMA,HSQ, mr-PosEBR, CSAR 62, ZEP, 520A, SML).
- Improved shape fidelity and positional accuracy of EBL patterns
in resist on insulated substrate materials such as SiO2,
fused silica, quartz, PDMS, etc.
- Water based formulation with excellent wetting properties.
- Simple spin coat application.
- Easy residue free removal by water or IPA rinse.
- Competitively priced. Idea for both research and industrial
applications.
- Manufactured in USA with global distribution network.
- 2 year shelf life at room temperature. Highly stable permanently
charged non-polymer formulation. No filtration required prior
to use.

Product name	DisCharge H2O	DisCharge H2OX2	DisCharge H2OX4
Solvent base	Water	Water	Water
Film Thickness	40 nm (1000 PRM)	80 nm (1000 RPM)	165 nm (1000 RPM)
Resistivity (Averaged)	7.30 Ωm	7.65 Ωm	9.48 Ωm
Shelf Life (at RT)	2 years	2 years	2 years

Spin Curves	Sheet Resistance vs Thickness

Evidence of DisCharge Anti-Charging Properties
300 nm PMMA 950 A4 / 1 mm PDMS / bulk Si
Without DisCharge: charge accumulation and sudden charge dissipation caused by exceeding the dielectric breakdown strength of the PDMS to the Si substrate resulting in significant cracking of the resist.	WITH DisCharge: no charge accumulation, resulting in expected image with no harm to the PDMS.
300 nm SML300 on glass Slide
Without DisCharge H2OX2: charge accumation leading to poor shape fidelity of the contrast curve pattern.	WITH DisCharge H2OX2: no charge accumulation is observed. The structure appears as expected.
300 nm mr-PosEBR on Glass Slide
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.	WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the positive resist is especially observed at high doses.
200 nm ZEP520A on Glass Slide
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.	WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the ZEP520A resist is especially observed at high doses.
300 nm CSAR 62 on Glass Slide
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.	WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the CSAR62 resist is especially observed at high doses.
300 nm ZEP520A on Fused Silica
Without DisCharge: charge accumulation resulting in poor shape fidelity of the tower pattern.	WITH DisCharge: No charge accumulation is observed. The structures appear as expected.
Without DisCharge: charge accumulation resulting in poor shape fidelity of the tower pattern	WITH DisCharge: No charge accumulation is observed. The structures appear as expected.