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Positive ebeam resist (6)
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2. H-SiQ - Negative E-beam Resist

ㆍ	H-SiQ is characterized by excellent pitch resolution, sensitivity and etch resistance for direct write thin film EBL applications.
ㆍ	DisChem H-SiQ is a negative tone hydrogen silesquioxane resist derived from dry silica resin (H-SiOx) in MIBK carrier solvent for use in electron beam lithography (EBL).
ㆍ	Thickness: 25 nm - 800 nm
ㆍ	20ml, 50ml, 100ml 등 이외 용량 선택 가능

H-SiQ - Negative E-beam Resist

H-SiQ Description	Application Guidelines
- H-SiQ is a negative tone hydrogen silesquioxane resist derived from dry silica resin (H-SiOx) in MIBK carrier solvent for use in electron beam lithography (EBL). - H-SiQ is characterized by excellent pitch resolution, sensitivity and etch resistance for direct write thin film EBL applications. - H-SiQ is prepared on a percent by weight basis of silica resin in semiconductor grade MIBK with concentrations ranging from 1 – 20% / wt. Prepared solutions are available in quantities of 20 – 100 ml.	- Bring H-SiQ to room temperature before opening bottle. - H-SiQ is applied by spin coating at 1000—6000 rpm. - H-SiQ is provided prefiltered to 0.22 um (<10%) and 0.45 um (>10%). Additional filtration is typically not required. If additional filtration is needed, please see the data sheet. - Bake after spin coating at 120°C for 2 minutes for high contrast and sensitivity at low exposure dose. - H-SiQ is developed after EBL using your preferred HSQ developer (TMAH or NaOH/NaCl). - Etch resistance of the cured H-SiQ film is comparable to traditional HSQ: 30 sccm CF4, 30 mTorr, 100 W, 33 nm/min.

Thin Film Spin Curve	Thic Film Spin Curve

H-SiQ 6% Results