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제품소개

  • Wafer
  • Photo resist
  • E-beam resist
  • Spin coater & Hot plate
  • WETSEM
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Wafer

Si wafer
ㆍ  2", 4", 6", 8", 12" wafer
ㆍ  Thermal oxidation process
ㆍ  CMP 공정으로 thickness 조정 가능
ㆍ  Metal deposition process
ㆍ  Patterning: photo and e-beam lithography
Si wafer
Si wafer specification
  Size
 2 inch 4 inch 6 inch 8 inch 12 inch
  Thicness 275 μm 525 μm 625 μm 725 μm 750 μm
  Type / dopant P-tyep / Boron (B) or N-type / Phosphorus (P), Antimony (Sb), Arsenic (As)
  Orientation <100>, <110>, <111>
  Resistivity - Low resistivity: < 0.005 ohm.cm (high dopped)
- Normal resistivity: 1 ~ 100 ohm.cm
- High resistivity: > 1,000 ohm.cm (undopped)
  Grade Prime, Test, Dummy
  Surface finished Single side polished or Double side polished
  Process service 1. Thermal oxidation: 30 Å ~ 3 μm
2. Nitride: 150 nm ~ 300 nm
3. E-beam evaporator and suputtering: metal depostion (thickness: customerized)
4. CMP: thickness (customerized)
5. Dicing: customerized
6. Patterning: photo and e-beam lithography