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Negative photo resist

6. AR-N 4400 negative photo resist
ㆍ  Negative photo resist
ㆍ  Easy removing, SU-8 대응 제품
ㆍ  Thickness: 3 μm - 100 μm
ㆍ  Lift-off
ㆍ  30ml, 100ml, 250ml, 500ml, 1L 용량 선택 가능
AR-N 4400 negative photo resist
Characterisation
Properties
  - i-, g-line, e-beam, X-ray, synchrotron, broadband UV
  - Chemically enhanced, very good adhesion, electro plating-
    stable
  - Very high sensitivity, easy removal
  - Profiles with high edge steepness for excellent resolution,
    covering of topologies
  - 4400-05/ -10 for films up to 10μm/ 20 μm (250 rpm)
  - 4450-10 for film thickness up to 20 μm and lift-off
  - 4400-25 for very thick films up to 50 μm (250 rpm)
  - 4400-50 for highest film thickness up to 100 μm
 Parameter /
 AR-N
4400
-05
4400
-10
4450
-10
4400
-25
4400
-50
 Thickness (μm) /
 1000 rpm
5 10 10 25 50
 Resolution (μm) 1.0 2.0 3.5 3.5 5.0
 Plasma etching rates (nm/min)
 (5 Pa, 240~250 V Bias)
Ar-sputtering 3
CF4 31
80 CF4 + 16 O2 81

Spin Curve
Process chemicals
AR_N_4400_05_10_spin_curve.jpg
AR_N_4400_05_10_spin_curve.jpg
Adhesion promotor AR 300-80
Developer AR 300-44, 300-46, 300-47
Thinner AR 300-12
Remover AR 600-70, AR 600-70

Process results
AR_N_4400_7_400x260px.jpg
AR_N_4400_10_1_400x260px.jpg
AR_N_4450_10_1_400x260px.jpg
AR_N_4450_10_4_400x260px.jpg

Comparison AR-N 4400 and SU-8
AR-N 4400 Resist properties - Suitability SU-8
Thick films ✓✓
Excellent aspect ratio
High sensitivity at i-line, deep UV, e-beam, X-ray ✓✓
Good sensitivity at g-line X
Low-stress tempering – easy handling X
Aqueous-alkaline development X
Easy removal X
Comparison AR-M 4400 vs. SU-8 removing after Au-plating
/CAR_44.jpg
SU_O.jpg
AR-N 4400
Resist thickness 30 µm / Au thickness 24 µm
Remover NMP room temperatue 5 minutes
SU-8
Resist thickness 20 μm / Au thickness 12.6 μm
Remover NMP 60 °C long, ultra sonic