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Positive photo resist

5. KL IR15 Photoresist for Image Reversal (Lift Off and Vertical profile)
ㆍ  Image Reversal (positive and negative) photo resist
ㆍ  Bake 온도로 positive와 negative tone으로 변경
Version: undercut profile and vertical profile
ㆍ  Thickness: 1.2 μm - 2.5 μm in a single coat
Exposure: i-Line, g-Line and broadband
ㆍ  저렴한 가격. 0.5 L, 1 L, 4 L 이외 용량 선택 가능
ㆍ  납기일: 3~5주 (평균 납기일: 24일, 2018년 납품 기준)
KL IR15 Photoresist for Image Reversal (Lift Off and Vertical profile)
Description
Properties
 - KL IR15 series image reversal photoresists are used as either
   positive and negative photoresist in i-line, g-line and broadband
   applications.
 - IR15: Designed for straight profiles when used as negative
   photoresist.
 - IR15 Lift Off: Designed for lift-off profiles when used as negative
   photoresist.
KL IR 15 image reversal photo resist spin curve

Positive Resist Mode
Negative (Lift Off) Resist Mode
Softbake 105 °C for 90 seconds
Exposure Broadband, i-lin, g-line
PEB 115 °C for 60 seconds
Development 0.26N TMAH
Removal NMP / DMSO based strippers
Softbake 105 °C for 90 seconds
Exposure Broadband, i-lin, g-line
Reversal Bake (critical step) 130 °C for 90 seconds
Flood Exposure (non-critical) 150 mJ/cm2 (broadband)
Development 0.26N TMAH
Hardbake (optional) 130 °C for 60 seconds
Removal NMP / DMSO based strippers

Process results 1
Example Negative tone Lift-Off Process Example Gold Deposition & Lift Off Process
Film Thickness 1.5 microns Film Thickness of PR 1.5 microns
Broadband exposure 100 mJ/cm2 Film Thickness of Gold 150 nm
Develop time 45 seconds puddle (recommended) Adhesion Layer Ti
Results
KL IR 15 image reversal photo resist lift-off process 1 KL IR 15 image reversal photo resist lift-off process 2

KL IR 15 image reversal photo resist lift-off process 3
 Results
(2, 3, 4 μm dense line/space after lift off)
KL IR 15 image reversal photo resist Gold Deposition and Lift Off Process 1

KL IR 15 image reversal photo resist Gold Deposition and Lift Off Process 2

KL IR 15 image reversal photo resist Gold Deposition and Lift Off Process 3

Process results 2
Example Positive tone Process Negative tone Process
Film Thickness 1.5 microns 1.5 microns
Broadband exposure ~ 70 mJ/cm2 ~ 70 mJ/cm2
Develop time 60 seconds puddle (recommended) 60 seconds puddle (recommended)
Results
KL IR 15 image reversal photo resist postive tone Process 1 KL IR 15 image reversal photo resist postive tone Process 2
KL IR 15 image reversal photo resist negative tone Process
Related Products (Guide for Kemlab Photoresists)
Product Suite
Tone / Exposure
Product
Film Thickness (μm)
0.20.50.811.322.534567891020304050100
KL 5302 Hi-Res
Interference Lithography (Link)		Positive
i-Line, Broadband, g-line		KL 5302 Hi-Res                    
                    
KL 5300
General Purpose
(Link)		Positive
i-Line, Broadband, g-line		KL 5302                    
KL 5305                    
KL 5310                    
KL 5315                    
KL 6000
General Purpose Thick
(Link)		Positive
i-Line, Broadband, g-line		KL 6003                    
KL 6005                    
KL 6008                    
K-PRO
Packaging Resist (Link)		Positive
i-Line, Broadband, g-line		K-PRO 7                    
K-PRO 715                    
                                                                                                                                                                             
Product Suite
Tone / Exposure
Product
Film Thickness (μm)
0.20.50.811.322.534567891020304050100
HARE SQ
Negative Epoxy
(Link)		Negative
Epoxy Resist
i-Line, Broadband
MEMS, Microfluidics		SQ 2                    
SQ 5                    
SQ 10                    
SQ 25                    
SQ 50                    
KL Image Reversal
Lift Off (Link)		Positive / Negative
i-Line, Broadband, g-line		KL IR-15 Lift Off                    
KL IR-15                    
APOL-LO 3200
Negative Lift Off
(Link)		Negative
i-Line, Broadband		APOL-LO 3202                    
APOL-LO 3204                    
APOL-LO 3207