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Positive ebeam resist

5. DisCharge H2O, IPA conductive resist
ㆍ  Conductive resist.
ㆍ  높은 안정성과 긴 제품 수명 (약 2년).
ㆍ  저렴한 가격. 25 ml ~ 4 L 다양한 용량.
DisCharge H2O, IPA conductive resist
DisCharge Advantage
DisCharge Properties
  - Efficient charge dissipation in e- beam lithography on a broad
    range of resist materials (novolac resist, PMMA, HSQ,
    mr-PosEBR, CSAR62, ZEP520A).
  - Improves shape fidelity, positioning and line pitch of e-beam
    resist on insulated substrate materials (fused silica, quartz,
    PDMS, etc.).
  - Competitively priced Ideal for research and industrial
    applications.
  - Available in water and IPA based formulations.
  - Excellent wetting properties.
  - Easy residue-free removal by water rinse at room temperature.
  - Manufactured in USA with global distribution network.
  - Permanently charged nonpolyaniline polymer provides high
    stability and longer shelf life (2 years).
 Parameter DisCharge H2O DisCharge IPA
 Solvent base Water Isopropanol
 Film Thickness 40nm @ 1000  rpm 70nm @ 4000  rpm
 Conductivity 1400-1600 μS/cm 120-180 μS/cm
 Refractive Index 1.3355 - 1.3360 1.3375 - 1.3385
 Flash Point
 (closed cup)
Non-flammable 12 °C
 Surface
 Resistance
109-1010 ohms  109-1010 ohms
 Total Dissolved 
 Solids
550-750 ppm   55-85 ppm
 Shelf Life
 (room temperature)
2 years 2 years

Spin Curve
With DisCharge (PMMA on PDMS)
DisCharge Spin curve.jpg
With DisCharge (adhesion promoter) on PMMA on PMDS.jpg

Evidence of DisCharge Anti-Charging Properties
300 nm PMMA 950 A4 / 1 mm PDMS / bulk Si
Without DisCharge H2O, IPA (adhesion promoter) on PMMA 950K A4 on PMDS on Si.jpg
Without DisCharge: charge accumulation and sudden charge dissipation caused by exceeding the dielectric breakdown strength of the PDMS to the Si substrate resulting in significant cracking of the resist.
With DisCharge H2O, IPA (adhesion promoter) on PMMA 950K A4 on PMDS on Si.jpg
WITH DisCharge: no charge accumulation, resulting in expected image with no harm to the PDMS.
   
 
300 nm mr-PosEBR on Glass Slide
Without DisCharge H2O, IPA (adhesion promoter) on mr-PosEBR on Glass slide.jpg
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.
 
With DisCharge H2O, IPA (adhesion promoter) on mr-PosEBR on Glass slide.jpg
WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the positive resist is especially observed at high doses.
200 nm ZEP520A on Glass Slide
Without DisCharge H2O, IPA (adhesion promoter) on ZEP 520A on Glass slide.jpg
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.
 
With DisCharge H2O, IPA (adhesion promoter) on ZEP 520A on Glass slide.jpg
WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the ZEP520A resist is especially observed at high doses.
300 nm CSAR 62 on Glass Slide
Without DisCharge H2O, IPA (adhesion promoter) on CSAR62 on Glass slide.jpg
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.
 
With DisCharge H2O, IPA (adhesion promoter) on CSAR62 on Glass slide.jpg
WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the CSAR62 resist is especially observed at high doses.
300 nm ZEP520A on Fused Silica
Without DisCharge H2O, IPA (adhesion promoter) on ZEP 520A on Fused Silica.jpg
Without DisCharge: charge accumulation resulting in poor shape fidelity of the tower pattern.
With DisCharge H2O, IPA (adhesion promoter) on ZEP 520A on Fused Silica.jpg
WITH DisCharge: No charge accumulation is observed. The structures appear as expected.
Poor shape without DisCharge H2O, IPA (adhesion promoter) on ZEP 520A on Fused Silica.jpg
Without DisCharge: charge accumulation resulting in poor shape fidelity of the tower pattern.
No charge with DisCharge H2O, IPA (adhesion promoter) on ZEP 520A on Fused Silica.jpg
WITH DisCharge: No charge accumulation is observed. The structures appear as expected.