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Positive photo resist (9)
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6. SurPass adhesion promoter (spin coating)

ㆍ	Spin coating 방식의 adhesion promoter.
ㆍ	No dehydration bake is needed.
ㆍ	저렴한 가격. 1 L, 1 Gal, 4 Gal 다양한 용량.

SurPass adhesion promoter

Advantages in Lithographic Processing	Compatibility
- Improved microlithographic resist, resist, polymer, and HSQ adhesion on a broad range of substrate materials. - Improved patterned resist mould to copper seed layer for subsequent electroforming operation. - Increased adhesion of evaporated metals to substrate materials. - Improved removal of critical substrate contaminants. - Improved adhesion may allow for reduction of EBL exposure energy for minimizing BSE emission reducing exposure time. - Reduced z-potential for improved coating properties. - May eliminate the need for thermally matched glass. - Eliminates need for substrate dehydration bake prior to processing. - Non-Hazardous waterborne formulation.	- Substrate compatibility. SurPass has demonstrates excellent adhesion properties on a wide range of III-V semiconductor materials, metals, metal oxides, ceramics (ruby, sapphire) and plastics (PET). - Resist and Polymer Compatibility. SurPass has shown compatibility with most positive and negative resistand polymer formulations, providing excellent adhesion when used in conjunction phenolic resin Novolac resist, DNQ, PMMA, PMGI, epoxy based polymer (SU8), polyimide, electron beam resist (includingHSQ), chemically and non-chemically amplified photoresist.

Spray / Dispense / Spin Coat Application

Selection of Appropriate SurPass Primer

Process step	SurPass 3000	SurPass 4000
Spin coat	3000 rpm / 30 seconds
Bake	No dehydration bake is needed
Rinse	Water (SU-8 IPA)	Water or IPA
Dry	Spin dry or N2 blow
Apply Resist	Epoxy resist (SU-8), HSQ, Polymer, PR	Novolac Based Resist

- SurPass 3000 is recommended for use with epoxy resists (SU-8)
and HSQ e-beam resist.

- SurPass 4000 is ideal for promoting adhesion of novolac resists
(ma-N 1400, ma-N 2400, Shipley 1800, etc.).

Positive Tone DNQ / Novolac Resist (ma-P1200 series)
ma-P 1200, Film thickness = 7.5 μm, development in 0.22 to 0.26N TMAH
Control, Silicon Substrate Bad adhesion of small patterns	Si + SurPass 4000 Excellent adhesion	SiO₂ + SurPass 4000 Excellent adhesion	Glass + SurPass 4000 Excellent adhesion	GaP + SurPass 4000 Excellent adhesion	Cu + SurPass 4000 Excellent adhesion

Negative Tone Aromatic Bisazide / Novolac Resist (ma-N 400, ma-N 1400 series)
ma-N 1400, Film thickness 1 μm, developed in ma-D533/S or 0.363 N TMAH
Control, Silicon Substrate Bad adhesion	Si + SurPass 4000 Excellent adhesion	SiO₂ + SurPass 4000 Excellent adhesion	Glass + SurPass 4000 Excellent adhesion	GaP + SurPass 4000 Excellent adhesion
ma-N 400, Film thickness = 7.5 μm, developed in ma-D 332S or 0.2N NaOH or 0.275N TMAH
Control, Silicon Substrate Bad adhesion	Si + SurPass 4000 Excellent adhesion	SiO₂ + SurPass 4000 Excellent adhesion	Glass + SurPass 4000 Excellent adhesion	GaP + SurPass 4000 Excellent adhesion

Nickel Electroplate on Positive Tone DNQ / Novolac Resist (ma-P1200 series)
Nickel electroplate of ma-P 1200 resist mould on copper seed layer on Si carrier substrate
ma-P 1200 resist mold, 7.5 μm thick. Ni electroplated to 5 μm thickness on Cu seed layer	ma-P 1200 resist mold, 30 μm thick. Ni electroplated to 25 μm thickness on Cu seed layer

Epoxy Resist (SU-8)
Control, Silicon Substrate Poor adhesion of large patterns	Si+ SurPass 3000 treatment Excellent Adhesion

Epoxy Resist (SU-8)
SU-8 epoxy resist on Si substrate treated with SurPass 3000
SU-8 epoxy resist on SiO2 substrate treated with SurPass 3000
SU-8 epoxy resist on Glass substrate treated with SurPass 3000
SU-8 epoxy resist on TiOx substrate treated with SurPass 3000
SU-8 epoxy resist on Cr/Au on Si substrate treated with SurPass 3000

Improved Adhesion of HSQ Electron Beam Resist
SurPass greatly improves electron beam resist adhesion on III, IV, V metal oxide substrates, allowing for reduced exposure energy and improved process latitude for small and large lithographic features.
Fig 1: EBL exposure of HSQ resist on multilayer InGaAs No Treatment prior to application of resist	Fig 2: EBL exposure of HSQ resist on multilayer InGaAs Treated with SurPass 3000 prior to application of HSQ resist
Fig 3: InGaAs multilayer system treated with SurPass 3000 prior to application HSQ resist. Exposure dose reduced by factor of four.	Fig 4 : 30nm lithographic structures on InGaAs multilayer system treated with SurPass 3000 prior to application of HSQ. Exposure dose reduced by factor of four.