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Positive photo resist (8)
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6. SurPass adhesion promoter (spin coating)

ㆍ	Spin coating 방식의 adhesion promoter.
ㆍ	No dehydration bake is needed.
ㆍ	저렴한 가격. 500 ml ~ 1 Gallen 다양한 용량.

SurPass adhesion promoter

Advantages in Lithographic Processing	Compatibility
- Improved microlithographic resist, resist, polymer, and HSQ adhesion on a broad range of substrate materials. - Improved patterned resist mould to copper seed layer for subsequent electroforming operation. - Increased adhesion of evaporated metals to substrate materials. - Improved removal of critical substrate contaminants. - Improved adhesion may allow for reduction of EBL exposure energy for minimizing BSE emission reducing exposure time. - Reduced z-potential for improved coating properties. - May eliminate the need for thermally matched glass. - Eliminates need for substrate dehydration bake prior to processing. - Non-Hazardous waterborne formulation.	- Substrate compatibility. SurPass has demonstrates excellent adhesion properties on a wide range of substrate materials, including glass, silicon nitride, metals, metal oxides, ceramics (ruby, sapphire) and plastics (PET). - Resist and Polymer Compatibility. SurPass has shown compatibility with most positive and negative resistand polymer formulations, providing excellent adhesion when used in conjunction phenolic resin Novolakresist (DNQ/Novolac/ma-N2400/Shipley1800), poly methylmethacrylate (PMMA), poly methylglutarimide (PMGI), epoxy based polymer (SU8), polyimide, electron beam resist (includingHSQ), chemically and non-chemically amplified photoresist.

Spray / Dispense / Spin Coat Application

Selection of Appropriate SurPass Primer

Process step	SurPass 3000	SurPass 4000
Spin coat	3000 rpm / 30 seconds
Bake	No dehydration bake is needed
Rinse	Water (SU-8 IPA)	Water or IPA
Dry	Spin dry or N2 blow
Apply Resist	Epoxy resist (SU-8), HSQ, Polymer, PR	Novolac Based Resist

- SurPass 3000 is recommended for use with epoxy resists (SU-8)
and HSQ e-beam resist.

- SurPass 4000 is ideal for promoting adhesion of novolac resists
(ma-N 1400, ma-N 2400, Shipley 1800, etc.).

Positive Tone DNQ / Novolac Resist (ma-P1200 series)
ma-P 1200, Film thickness = 7.5 μm, development in 0.22 to 0.26N TMAH
Control, Silicon Substrate Bad adhesion of small patterns	Si + SurPass 4000 Excellent adhesion	SiO₂ + SurPass 4000 Excellent adhesion	Glass + SurPass 4000 Excellent adhesion	GaP + SurPass 4000 Excellent adhesion	Cu + SurPass 4000 Excellent adhesion

Negative Tone Aromatic Bisazide / Novolac Resist (ma-N 400, ma-N 1400 series)
ma-N 1400, Film thickness 1 μm, developed in ma-D533/S or 0.363 N TMAH
Control, Silicon Substrate Bad adhesion	Si + SurPass 4000 Excellent adhesion	SiO₂ + SurPass 4000 Excellent adhesion	Glass + SurPass 4000 Excellent adhesion	GaP + SurPass 4000 Excellent adhesion
ma-N 400, Film thickness = 7.5 μm, developed in ma-D 332S or 0.2N NaOH or 0.275N TMAH
Control, Silicon Substrate Bad adhesion	Si + SurPass 4000 Excellent adhesion	SiO₂ + SurPass 4000 Excellent adhesion	Glass + SurPass 4000 Excellent adhesion	GaP + SurPass 4000 Excellent adhesion

Nickel Electroplate on Positive Tone DNQ / Novolac Resist (ma-P1200 series)
Nickel electroplate of ma-P 1200 resist mould on copper seed layer on Si carrier substrate
ma-P 1200 resist mold, 7.5 μm thick. Ni electroplated to 5 μm thickness on Cu seed layer	ma-P 1200 resist mold, 30 μm thick. Ni electroplated to 25 μm thickness on Cu seed layer

Epoxy Resist (SU-8)
Control, Silicon Substrate Poor adhesion of large patterns	Si+ SurPass 3000 treatment Excellent Adhesion

Epoxy Resist (SU-8)
SU-8 epoxy resist on Si substrate treated with SurPass 3000
SU-8 epoxy resist on SiO2 substrate treated with SurPass 3000
SU-8 epoxy resist on Glass substrate treated with SurPass 3000
SU-8 epoxy resist on TiOx substrate treated with SurPass 3000
SU-8 epoxy resist on Cr/Au on Si substrate treated with SurPass 3000

Improved Adhesion of HSQ Electron Beam Resist
SurPass greatly improves electron beam resist adhesion on III, IV, V metal oxide substrates, allowing for reduced exposure energy and improved process latitude for small and large lithographic features.
Fig 1: EBL exposure of HSQ resist on multilayer InGaAs No Treatment prior to application of resist	Fig 2: EBL exposure of HSQ resist on multilayer InGaAs Treated with SurPass 3000 prior to application of HSQ resist
Fig 3: InGaAs multilayer system treated with SurPass 3000 prior to application HSQ resist. Exposure dose reduced by factor of four.	Fig 4 : 30nm lithographic structures on InGaAs multilayer system treated with SurPass 3000 prior to application of HSQ. Exposure dose reduced by factor of four.