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Negative ebeam resist

3. AR-N 7520 New - Negative E-beam Resist
ㆍ  Negative e-beam resist with highest resolution
ㆍ  Highest resolution and highly sensitive for the production of integrated circuits
ㆍ  Thickness: 90 nm - 800 nm
ㆍ  Mix & match processes between e-beam and UV exposure 248-365 nm, negative in the UV range
ㆍ  100ml, 250ml, 500ml, 1L 용량 선택 가능
AR-N 7520 New - Negative E-beam Resist
Characterisation
Properties
  - E-beam, deep UV, i-line (formerly SX AR-N 7520/4).
  - Short writing times, very high contrast.
  - Mix & match processes between e-beam and UV exposure
    248-365 nm, negative in the UV range.
  - Highest resolution, very process-stable (no CAR).
  - Plasma etching resistant, temp.-stable up to 140 °C.
  - novolac, organic crosslinking agent.
  - safer solvent PGMEA.
 Parameter /AR-N 7520 New.17.11.07
 Thickness (μm) /4000 rpm0.40.20.1
 Resolution best value (nm)28
 Plasma etching rates (nm/min)
 (5 Pa, 240-250 V Bias)
Ar-sputtering8
O2169
CF441
80 CF4 + 16 O290

Spin Curve
Process chemicals
Negative e-beam resist spin curve
   
Adhesion promotorAR 300-80
DeveloperAR 300-47, AR 300-46
ThinnerAR 300-12
RemoverAR 600-71, 300-73

Process results
Negative e-beam resist resolution
AR-N 7520.07 new 30-nm lines at a film thickness of 90 nm
Negative e-beam resist structures
AR-N 7520.17 new 400 and 600 nm lines, thickness 400 nm