Home > 제품소개 > Negative ebeam resist
Characterisation | Properties | ||||||||||||||||||||||||||||
- E-beam, deep UV, i-line (formerly SX AR-N 7520/4). - Short writing times, very high contrast. - Mix & match processes between e-beam and UV exposure 248-365 nm, negative in the UV range. - Highest resolution, very process-stable (no CAR). - Plasma etching resistant, temp.-stable up to 140 °C. - novolac, organic crosslinking agent. - safer solvent PGMEA. |
|
Spin Curve | Process chemicals | ||||||||
![]() |
|
Process results | |||
![]() AR-N 7520.07 new 30-nm lines at a film thickness of 90 nm | ![]() AR-N 7520.17 new 400 and 600 nm lines, thickness 400 nm |
Tone | Product (link) | Film Thickness (nm) | Feature |
Adhesion Promoter | SurPass series | NA | Apply resist: Novolac, DNQ, PMMA, HSQ, PMGI, SU-8, SML, PI, ... |
Negative ebeam resist | HSQ series | 8 – 1,650 | Dilution: 1 - 45%. Supply: Powder, Solution. |
H-SiQ series | 25 – 850 | Dilution: 2 - 20%. Supply: Powder, Solution. | |
AR-N 7520 New series | 100 – 800 | Best resolution: 28 nm. e-beam, DUV, i-line. | |
Positive ebeam resist | HARP PMMA series | 50 – 3,700 | m/W: 950K, 495K. Dilution: 2 - 11 %. |
HARP-C Copolymer series | 150 – 1,100 | MMA/MAA Copolyer. Dilution: 6 - 12 %. | |
PMMA series | 40 – 7,000 | m/W: 950K, 495K, 350K, 120K, 35K. Dilution: 1 - 18 %. | |
Copolymer series | 100 – 1,100 | Copolymer. Dilution: 1 - 13 %. | |
SML series | 50 – 4,800 | High resolution: 5 nm. Aspect ratio: >50:1. Slow etch rate. | |
Conductive layer | DisCharge H2O series | 25 – 170 | Apply resist: PMMA, HSQ, mr-PosEBR, AR-P 6200, ZEP, SML. |
Protective Surface Coating | PSC-1003 | 2.4 – 5.3 | Protective Surface Coating |
PSC-IB DPM 1010 | 10 (@ 2000 RPM) | Protective Surface Coating |