혁신에 열정을 더하다

제품소개

  • Wafer
  • Photo resist
  • E-beam resist
  • Spin coater & Hot plate
  • WETSEM
  • Coming soon

고객센터

Home > 제품소개 > Negative ebeam resist

Negative ebeam resist

2. SX AR-N 8200 - Negative E-beam Resist
ㆍ  Etch-stable, high-resolution negative e-beam resist
ㆍ  Comparable to HSQ, but higher process stability, easier to remove, considerably higher shelf life
ㆍ  Thickness: 40 nm - 200 nm
ㆍ  100ml, 250ml, 500ml, 1L 용량 선택 가능
SX AR-N 8200 - Negative E-beam Resist
SX AR-N 8200 Characterisation
Properties
  - High-resolution negative e-beam resist (10 nm).
  - Etch-stable resist structures available in two film thicknesses.
  - Comparable to HSQ, but higher process stability,
    easier to remove, considerably higher shelf life.
  - Sensitivity is increased by a factor of 20 if an additional
    tempering step is applied.
 Parameter / SX AR-N8200.038200.06
 Film thickness (nm) /4000 rpm50100
 Resolution (nm)10
 Plasma etching rates (nm/min)
 (1 Pa, 230 W Bias)
Ar-sputtering 
O2 
CF4 
30 CF4 + 5 O2240

Spin Curve
Process chemicals
SX AR-N 8200 Negative e-beam resist spin curve
   
DeveloperAR 300-44
ThinnerAR 600-07
StopperDI water
Remover2n NaOH, BOE

Process results
11 nm structures produced with SX AR-N 8200.03/1
11 nm structuresproduced withSX AR-N 8200.03/1
100 nm bars with SX AR-N 8200.06/1
100 nm bars with SX AR-N 8200.06/1


SX AR-N 8250 Characterisation
Properties
  - High-resolution e-beam resist, also sensitive in EUV (13.5 nm)
    and DUV (250 nm) range.
  - Comparable to HSQ, but with by a factor of 20 higher sensitivity,
    easier to remove.
  - Considerably higher shelf life.
 Parameter / SX AR-N8250.038250.06
 Film thickness (nm) /4000 rpm50100
 Resolution (nm)20
 Plasma etching rates (nm/min)
 (1 Pa, 240-250 V Bias)
Ar-sputtering 
O2 
CF4 
30 CF4 + 5 O2240

Spin Curve
Process chemicals
SX AR-N 8200 Negative e-beam resist spin curve
   
DeveloperAR 300-44
ThinnerAR 600-07
StopperDI water
Remover2n NaOH, BOE

Process results
200 nm bars, written at 100 kV with SX AR-N 8200.03/1
200 nm bars, written at 100 kV with SX AR-N 8200.03/1
structure with higher sensitivity
Structure with higher sensitivity