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Positive ebeam resist (6)
Negative ebeam resist (5)

4. SX AR-N 8200 - Negative E-beam Resist

ㆍ	Etch-stable, high-resolution negative e-beam resist
ㆍ	Comparable to HSQ, but higher process stability, easier to remove, considerably higher shelf life
ㆍ	Thickness: 40 nm - 200 nm
ㆍ	100ml, 250ml, 500ml, 1L 용량 선택 가능

SX AR-N 8200 - Negative E-beam Resist

SX AR-N 8200 Characterisation

Properties

- High-resolution negative e-beam resist (10 nm).
- Etch-stable resist structures available in two film thicknesses.
- Comparable to HSQ, but higher process stability,
easier to remove, considerably higher shelf life.
- Sensitivity is increased by a factor of 20 if an additional
tempering step is applied.

Parameter / SX AR-N	8200.03	8200.06
Film thickness (nm) /4000 rpm	50	100
Resolution (nm)	10

Plasma etching rates (nm/min) (1 Pa, 230 W Bias)	Ar-sputtering
	O₂
	CF₄
	30 CF₄ + 5 O₂	240

Spin Curve

Process chemicals

Developer	AR 300-44
Thinner	AR 600-07
Stopper	DI water
Remover	2n NaOH, BOE

Process results
11 nm structuresproduced withSX AR-N 8200.03/1	100 nm bars with SX AR-N 8200.06/1

SX AR-N 8250 Characterisation

Properties

- High-resolution e-beam resist, also sensitive in EUV (13.5 nm)
and DUV (250 nm) range.
- Comparable to HSQ, but with by a factor of 20 higher sensitivity,
easier to remove.
- Considerably higher shelf life.

Parameter / SX AR-N	8250.03	8250.06
Film thickness (nm) /4000 rpm	50	100
Resolution (nm)	20

Plasma etching rates (nm/min) (1 Pa, 240-250 V Bias)	Ar-sputtering
	O₂
	CF₄
	30 CF₄ + 5 O₂	240

Spin Curve

Process chemicals

Developer	AR 300-44
Thinner	AR 600-07
Stopper	DI water
Remover	2n NaOH, BOE

Process results
200 nm bars, written at 100 kV with SX AR-N 8200.03/1	Structure with higher sensitivity