| 7. KL 5300 Photoresist for IC fabrication |
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- KL 7000 series 출시로 단종 예정.
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- Positive photo resist
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- CD: 0.55 μm
Thickness: 0.15 μm - 2.5 μm
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- Application: IC fabrication, interference or holographic lithography, diffraction grating
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| KL 5300 positive photo resist for IC fabrication ▼ |
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Description |
Sample process |
- KL5300 is a positive photoresist optimized for i-Line, g-Line, and
broadband applications.
- KL5300 offers high sensitivity, and high throughput suitable for
IC fabrication.
- Film Thickness range of 0.15 – 2.5 μm.
- Designed for use with industry standard 0.26 N TMAH
developers.
- Application: Integrated circuits, Interference lithography,
Diffraction grating. |
| Substrate |
150 mm Si |
Exposure |
NSR-1755g7a |
| Dehydration |
NA |
Thickness |
1.31 μm |
| HMDS |
100 °C, 40 sec |
PEB |
115 °C, 60 sec |
| Track |
Tel Mark V |
Develop |
23 °C, 60 sec,
s-puddle |
| SoftBake |
90 °C, 60 sec |
HardBake |
110 °C, 60 sec | |
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KL 5300 Spin Curve |
KL 5302 Spin Curve |
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Process results |
 1.5 μm film thickness |
 CD: 0.55 μm |
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| Related Products (Guide for Kemlab Positive Photoresists) ▼ |
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| Related Products (Guide for Kemlab Neative Photoresists) ▼ |
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