Photo & e-beam resist

5. AR-P 6200 positive e-beam resist
  •  
    Positive e-beam resist with highest resolution
     
    High-contrast e-beam resists for the production of integrated circuits and masks
     
    Thickness: 50 nm - 1600 nm
     
    Easy fabrication of lift-off structures
     
    30ml, 100ml, 250ml, 500ml, 1L 용량 선택 가능
AR-P 6200 positive e-beam resist ▼
Characterisation
Properties
  - E-beam; layer thickn. 0,05 - 1,6 μm (6000 - 1000 rpm)
  - High sensitivity which can be adjusted via the developer
  - Highest resolution (< 10 nm) and very high contrast
  - Highly process-stable, high plasma etching resistance
  - Easy fabrication of lift-off structures
  - Safer solvent anisole
 Parameter /AR-P 6200 .18 .13 .09 .04
 Thickness (μm) /4000 rpm 0.80 0.40 0.20 0.08
 Resolution best value (nm) 6
 Plasma etching rates (nm/min)
 (5 Pa, 240~250 V Bias)		 Ar-sputtering 10
CF4 45
80 CF4 + 16 O2 99

Spin Curve
Process chemicals
AR_P_6200_spin_curve.JPG
Conductive protective coating AR-PC 5090
Adhesion promotor AR 300-80
Developer AR 600-546, 600-549
Thinner AR 600-02
Stopper AR 600-60
Remover AR 600-71, 300-76

Process results
AR_P_6200_3_2_400x260px.jpg
Resolution AR-P 6200 of 10 nm (thickness: 180 nm)
AR_P_6200_24_400x260px.jpg
Undercut structures obtained with increased exposure dose
T_gate_resist_structure_400x260px.jpg
T-gate structures produced with a triple-layer system
 
AR_P_6200_6_400x260px.jpg
AR-P 6200.09 as top resist for extreme lift-off applications
(two-layer systems)
AR_P_6200_5_1_400x260px.jpg
19 nm metal lines after lift-off process with AR-P 6200.09
AR_P_6200_7_1_400x260px.jpg
Chromium-structures after lift-off process
Products Guide ▼
Tone
Product (link)
Film Thickness (nm)
Feature
Adhesion PromoterSurPass seriesNAApply resist: Novolac, DNQ, PMMA, HSQ, PMGI, SU-8, SML, PI, ...
Negative ebeam resistHSQ series8 – 1,650Dilution: 1 - 45%.
Supply: Powder, Solution.
H-SiQ series25 – 850Dilution: 2 - 20%.
Supply: Powder, Solution.
AR-N 7520 New series100 – 800Best resolution: 28 nm.
e-beam, DUV, i-line.
Positive ebeam resistHARP PMMA series50  – 3,700m/W: 950K, 495K.
Dilution: 2 - 11 %.
HARP-C Copolymer series150  – 1,100MMA/MAA Copolyer.
  Dilution: 6 - 12 %.
PMMA series40  – 7,000m/W: 950K, 495K, 350K, 120K, 35K.
  Dilution: 1 - 18 %.
Copolymer series100  – 1,100Copolymer.
  Dilution: 1 - 13 %.
SML series50  – 4,800High resolution: 5 nm. Aspect ratio: >50:1.
  Slow etch rate.
Conductive layerDisCharge H2O series25 – 170Apply resist: PMMA, HSQ, mr-PosEBR, AR-P 6200, ZEP, SML.
Protective Surface CoatingPSC-10032.4 – 5.3Protective Surface Coating
PSC-IB DPM 101010 (@ 2000 RPM)Protective Surface Coating
* Double coating.