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Positive photo resist

3. KL 6000 Thick photoresist
ㆍ  Positive photo resist High sensitivity and throughput
ㆍ  Application: Advanced packaging, TSV, Bumping, Plating
ㆍ  Thickness: 2.5 μm - 12 μm
Exposure: i-Line, g-Line and broadband
ㆍ  저렴한 가격. 500ml, 1L, 1G 이외 용량 선택 가능
Test sample 제공 가능
ㆍ  납기일: 3~5주 (평균 납기일: 24일, 2018년 납품 기준)
KL 6000 Thick positive photo resist
Description
Properties
 - KL6000 is a positive photoresist for use in i-Line, g-Line and
   broadband applications.

 - KL6000 offers high sensitivity, high throughput, and excellent
   process latitude.
 - Application: Advanced packaging, TSV, Bumping, Plating.
 - Cover 2.5 – 12 microns in a single coat.
 - Designed for use with industry standard 0.26 N TMAH
   developers.
  - No PEB necessary.

KL 6000 Spin Curve
Film Thickness Range
KL 6000 Positive Photo Resist Spin curve.
Product microns Viscosity (cst)
KL 6008 5 - 12+ 210
KL 6005 4 - 7 98
KL 6003 2.5 - 4.5 45

Process Guide
Product:
Film Thickness
KL 6008
11 μm
KL 6008
8 μm
KL 6005
5 μm
KL 6003
3 μm
Softbake 105 °C for 150 sec 105 °C for 150 sec 105 °C for 120 sec 105 °C for 90 sec
Expose (broadband) on Si 210 mJ/cm2 180 mJ/cm2 120 mJ/cm2 90 mJ/cm2
Post Exposure Bake (optional) 65 °C for 1 min
95 °C for 1 min
65 °C for 1 min
95 °C for 1 min
65 °C for 2 min
95 °C for 2 min
65 °C for 3 min
  95 °C for 3 min
Develop double spray puddle,
each 90 sec
double spray puddle,
each 75 sec
double spray puddle,
each 45 sec
single spray puddle,
60 sec
Boradband Exposure
KL 6008 Positive Photo Resist Boradband exposure 3 micron lines at film thickness 11 micron
3 micron lines

KL 6008 Positive Photo Resist Boradband exposure 3 micron lines at film thickness 8 micron
3 micron lines

KL 6005 Positive Photo Resist Boradband exposure 2 micron lines at film thickness 5 micron
 2 micron lines

KL 6003 Positive Photo Resist Boradband exposure 1 micron lines at film thickness 3 micron
1 micron lines

Process results
KL 6000 Positive Photo Resist Process result 2 micron lines at 4 micron film thickness
2 μm line @ 4 μm film thickness
KL 6000 Positive Photo Resist Process result 3 micron lines at 4 micron film thickness
3 μm line @ 4 μm film thickness
Related Products (Guide for Kemlab Photoresists)
Product Suite
Tone / Exposure
Product
Film Thickness (μm)
0.20.50.811.322.534567891020304050100
KL 5302 Hi-Res
Interference Lithography (Link)
Positive
i-Line, Broadband, g-line
KL 5302 Hi-Res                    
                    
KL 5300
General Purpose
(Link)
Positive
i-Line, Broadband, g-line
KL 5302                    
KL 5305                    
KL 5310                    
KL 5315                    
KL 6000
General Purpose Thick
(Link)
Positive
i-Line, Broadband, g-line
KL 6003                    
KL 6005                    
KL 6008                    
K-PRO
Packaging Resist (Link)
Positive
i-Line, Broadband, g-line
K-PRO 7                    
K-PRO 715                    
                                                                                                                                                                             
Product Suite
Tone / Exposure
Product
Film Thickness (μm)
0.20.50.811.322.534567891020304050100
HARE SQ
Negative Epoxy
(Link)
Negative
Epoxy Resist
i-Line, Broadband
MEMS, Microfluidics
SQ 2                    
SQ 5                    
SQ 10                    
SQ 25                    
SQ 50                    
KL Image Reversal
Lift Off (Link)
Positive / Negative
i-Line, Broadband, g-line
KL IR-15 Lift Off                    
KL IR-15                    
APOL-LO 3200
Negative Lift Off
(Link)
Negative
i-Line, Broadband
APOL-LO 3202                    
APOL-LO 3204                    
APOL-LO 3207